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參數(shù)資料
| 型號(hào)： | OM3105N |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Hybrid integrated circuits for inductive proximity detectors |
| 中文描述： | 電感式接近探測(cè)器的混合集成電路 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | OM3105N |
January 1994
4
Philips Semiconductors
Preliminary specification
Hybrid integrated circuits for inductive
proximity detectors
OM3105P
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
V
B
= 24 V (DC); T
s
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
I
O
T
stg
T
s
DC supply voltage
output current; T
s
= 25
°
C
storage temperature
operating substrate temperature
6
40
20
35
250
+125
+70
V
mA
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
I
B
supply current
output stage ON
output stage OFF
I
O
= 250 mA
coil M5
11
1.5
1
0.8
1.5
mA
mA
V
mm
V
d
d
voltage drop
detection distance
20
80
1.0
0.8
MBD233
0.9
0
20
40
60
d
(mm)
Ts
o
doff
don
Fig.2
Switching distance as a function of the
substrate temperature.
6
1.0
0.8
MBD235
0.9
12
18
24
30
d
(mm)
VB
doff
don
Fig.3
Switching distance as a function of the DC
supply voltage.
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