參數(shù)資料
型號(hào)： NZT6727
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： PNP General Purpose Amplifier
中文描述： 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT--223, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 38K
代理商： NZT6727
2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
N
Absolute Maximum Ratings*
T
a
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above whitch the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Sustaining Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
EBO
Emitter Cut-off Current
On Characteristics
h
FE
DC Current Gain
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1.0%
Thermal Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm
2
.
Parameter
Value
-40
-50
-5.0
-1.5
- 55 ~ 150
Units
V
V
V
A
°
C
- Continuous
Test Condition
Min.
Max.
Units
I
C
= -10mA, I
B
= 0
I
C
= -1.0mA, I
E
= 0
I
E
= -100
μ
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
EB
= -5.0V, I
C
= 0
-40
-50
-5.0
V
V
V
μ
A
μ
A
-0.1
-0.1
I
C
= -10mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0
I
C
= -1.0A, V
CE
= -1.0V
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, V
CE
= -1.0V
55
60
50
250
-0.5
-1.2
V
CE
(sat)
V
BE
(on)
Small Signal Characteristics
h
fe
C
cb
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
Small Signal current Gain
Collector-Base Capacitance
I
C
= -50mA, V
CE
= -10V, f = 20MHz
V
CB
= -10V, I
E
= 0, f = 1.0MHz
2.5
25
30
pF
Parameter
Max.
1.0
8.0
125
Units
W
mW/
°
C
°
C/W
NZT6727
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers
and switches requiring collecor currents to 1.0A.
Sourced from process 77.
1. Base 2. Collector 3. Emitter
SOT-223
1
2
4
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NZT6727_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT6728 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT6728_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT6729 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT6729_Q 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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