參數資料
型號： NZT605
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： NPN Darlington Transistor
中文描述： 1500 mA, 110 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-223, 4 PIN
文件頁數： 1/3頁
文件大?。?/td> 38K
代理商： NZT605
2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
N
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are baseed on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage *
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
I
CES
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
On Characteristics *
h
FE
DC Current Gain
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm; mounting pad for the collector lead min. 6cm
2
Parameter
Value
110
140
10
1.5
- 55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Test Conditions
Min.
Max.
Units
I
C
= 10mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CE
= 120V, I
E
= 0
V
EB
= 8.0V, I
C
= 0
110
140
10
V
V
V
nA
nA
nA
10
10
100
I
C
= 50mA, V
CE
= 5.0V
I
C
= 500mA, V
CE
= 5.0V
I
C
= 1.0A, V
CE
= 5.0V
I
C
= 2.0A, V
CE
= 5.0V
I
C
= 250mA, I
B
= 0.25mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, I
B
= 1.0mA
I
C
= 1.0A, V
CE
= 5.0V
2000
5000
2000
500
100K
V
CE(sat)
Collector-Emitter Saturation Voltage
1
1.5
1.8
1.7
V
V
BE(sat)
V
BE(on)
Small Signal Characteristics
f
T
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
V
V
Transition Frequency
I
C
= 100mA, V
CE
= 10V, f = 20MHz
150
MHz
Parameter
Max.
1,000
8.0
125
Units
mW
mW/
°
C
°
C/W
NZT605
NPN Darlington Transistor
This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
Sourced from process 06.
SOT-223
1. Base 2.4. Collector 3. Emitter
1
2
4
3
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相關代理商/技術參數
參數描述
NZT605_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor
NZT651 功能描述:兩極晶體管 - BJT NPN Transistor Current Driver RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT651_Q 功能描述:兩極晶體管 - BJT NPN Transistor Current Driver RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT660 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT660_05 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Low Saturation Transistor
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