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參數(shù)資料
| 型號(hào)： | NX8561JD |
| 廠商： | NEC Corp. |
| 英文描述： | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| 中文描述： | 摻鉺光纖放大器1 480納米的應(yīng)用InGaAsP的應(yīng)變量子阱的DC -異質(zhì)結(jié)激光二極管模塊 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 65K |
| 代理商： | NX8561JD |
Data Sheet P14128EJ2V0DS00
4
NX7660JC
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Monitor PD: T
LD
= 25 °C, T
C
= –5 to +70 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Monitor Current
I
m
V
R
= 5 V, P
f
= 5 mW
50
150
260
μ
A
Monitor Dark Current
I
D
V
R
= 5 V
1.0
10
nA
Tracking Error
γ
*1
I
m
= const.
0.5
dB
*1
γ
= 10 log
P
f
(mW)
5
P
f
0
I
m
I
m
T
LD
= T
C
= 25 C
T
LD
= 25 C,
T
C
= –5 to +70 C
(@ P
f
(25 C) = 5 mW)
ELECTRO-OPTICAL CHARACTERISTICS
(Applicable to Thermistor and TEC: T
LD
= 25 °C, T
C
= –5 to +70 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Thermistor Resistance
R
9.5
10.0
10.5
k
B Constant
B
3 300
3 400
3 500
K
Cooler Current
I
C
T = 45 K
0.6
1.0
A
Cooler Voltage
V
C
T = 45 K
1.4
2.0
V
Cooling Capacity
T
*1
I
C
= 1.0 A
45
K
*1
T = T
C
– T
LD
P
f
5 mW
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