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參數(shù)資料
| 型號： | NX5306 |
| 廠商： | NEC Corp. |
| 英文描述： | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| 中文描述： | NEC公司的1310 nm InGaAsP多量子阱FP激光二極管可包裝 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 230K |
| 代理商： | NX5306 |
NX5306 SERIES
TYPICAL CHARACTERISTICS
(
T
C
=
40 to +85°C, unless otherwise speci
T
ed)
Remark
The graphs indicate nominal characteristics.
Forward Current I
F
(mA)
O
o
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
10
7.5
5.0
2.5
0
20
40
60
80
100
+C
+
T
C
0
OPERATING CURRENT AND THRESHOLD
CURRENT vs. CASE TEMPERATURE
100
Case Temperature T
C
(oC)
O
o
T
t
1
-60
2
3
5
10
20
30
50
-40
-20
0
20
40
60
80
100
I
op
I
th
TEMPERATURE DEPENDENCE OF
CENTER WAVELENGTH
Case Temperature T
C
(oC)
C
λ
C
1 340
1 280
1 300
1 320
0
-20
-40
-60
20
60
40
80
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NX5306EHNX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX8561JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX8561JD | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX7660JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NX5306EHNX5306EK | 制造商:NEC 制造商全稱:NEC 功能描述:NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5306EK | 制造商:NEC 制造商全稱:NEC 功能描述:NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5307 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
| NX5307EH-AZ | 制造商:CEL 制造商全稱:CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
| NX5307EK-AZ | 制造商:CEL 制造商全稱:CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
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