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參數(shù)資料
| 型號(hào)： | NX5306 |
| 廠商： | NEC Corp. |
| 英文描述： | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| 中文描述： | NEC公司的1310 nm InGaAsP多量子阱FP激光二極管可包裝 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | NX5306 |
NEC’s 1310 nm InGaAsP MQW FP
LASER DIODE IN CAN PACKAGE
FOR 155 Mb/s and 622 Mb/s APPLICATIONS
NX5306 SERIES
FEATURES
OPTICAL OUTPUT POWER:
P
O
= 5.0 mW
LOW THRESHOLD CURRENT :
I
TH
= 10 mA
HIGH SPEED:
t
r
= 0.3 ns MAX
t
f
= 0.3 ns MAX
WIDE OPERATING TEMPERATURE RANGE:
T
C
= -40 to +85°C
InGaAs MONITOR PIN-PD
CAN PACKAGE:
5.6 mm
BASED ON TELCORDIA RELIABILITY
NEC’s NX5306 series is a 1310 nm Multiple Quantum Well
(MQW) structured Fabry-Perot (FP) laser diode with InGaAs
monitor PIN-PD. This device is ideal for Synchronous Digital
Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short
haul STM-4 (S-4.1), and ITU-T recommendations.
DESCRIPTION
California Eastern Laboratories
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NX5306EHNX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5306EK | NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX8561JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
| NX8561JD | 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
| NX7660JC | InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NX5306EHNX5306EK | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5306EK | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE |
| NX5307 | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
| NX5307EH-AZ | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
| NX5307EK-AZ | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION |
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