參數(shù)資料
型號： NX3008CBKS
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 30 - 30 V, 350 - 200 mA N-P-channel Trench MOSFET
中文描述： 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-88, 6 PIN
文件頁數(shù)： 1/21頁
文件大?。?/td> 1509K
代理商： NX3008CBKS
1.
Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very
small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Level shifter
Power supply converter
Load switch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
TR2 (P-channel)
V
DS
V
GS
I
D
TR1 (N-channel)
V
DS
V
GS
I
D
TR1 (N-channel), Static characteristics
R
DSon
drain-source on-state
resistance
TR2 (P-channel), Static characteristics
R
DSon
drain-source on-state
resistance
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
-30
8
-200
V
V
mA
V
GS
= -4.5 V; T
amb
= 25 °C
[1]
-
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
-
-8
-
-
-
30
8
350
V
V
mA
V
GS
= 4.5 V; T
amb
= 25 °C
[1]
-
V
GS
= 4.5 V; I
D
= 350 mA;
T
j
= 25 °C
-
1
1.4
V
GS
= -4.5 V;
I
D
= -200 mA; T
j
= 25 °C
-
2.8
4.1
相關PDF資料
PDF描述
NX3008CBKV 30 - 30 V, 400 - 220 mA N-P-channel Trench MOSFET
NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET
NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET
NX3008NBKV 30 V, 400 mA dual N-channel Trench MOSFET
NX3008NBKW 30 V, 350 mA N-channel Trench MOSFET
相關代理商/技術(shù)參數(shù)
參數(shù)描述
NX3008CBKS,115 功能描述:MOSFET 30/30V, 350/200 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008CBKV 制造商:NXP Semiconductors 功能描述:MOSFET N/P CH 30/30V 400/220MASOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666 制造商:NXP Semiconductors 功能描述:MOSFET, N/P CH, 30/30V, 400/220MA,SOT666; Transistor Polarity:N and P Channel; Continuous Drain Current Id:400mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:330mW ;RoHS Compliant: Yes
NX3008CBKV,115 功能描述:MOSFET 30/30V, 400/220 MA N/P-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NX3008NBK 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 400MA SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 30V, 400MA, SOT23, Transistor Polarity:N Channel, Continuous Drain
NX3008NBK,215 功能描述:MOSFET 30V 400 MA N-CH TRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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