參數資料
型號： NUS5530MN
廠商： ON SEMICONDUCTOR
英文描述： Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
中文描述： 集成功率MOSFET與進步黨低Vce（sat）開關晶體管
文件頁數： 5/9頁
文件大?。?/td> 167K
代理商： NUS5530MN
NUS5530MN
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS FOR P
CHANNEL FET
125
°
C
2.5 V
0
20
2.5
16
12
3
1.5
1
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
8
4
0
0.5
Figure 1. On
Region Characteristics
0
20
16
1.5
1
2
12
8
4
0.5
0
2.5
3
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0
0.05
2
4
0.15
0.1
0
5
Figure 3. On
Resistance versus
Gate
to
Source Voltage
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
R
D
D
T
S
I
D
D
2
18
20
14
10
0.15
0.1
6
0.05
Figure 4. On
Resistance versus Drain Current
and Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
V
GS
=
1.5 V
0.2
1
3
T
J
=
55
°
C
I
D
=
3.9 A
T
J
= 25
°
C
0.2
0
75
150
T
J
= 25
°
C
V
GS
= 2.5 V
I
D
=
3.9 A
V
GS
=
4.5 V
R
D
D
T
S
R
2
2 V
3 V
3.5 V
5 V
4.5 V
4 V
25
°
C
R
D
D
T
S
1.6
V
GS
= 3.6 V
V
GS
= 4.5 V
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相關代理商/技術參數
參數描述
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