參數(shù)資料
型號(hào)： NUS3055MUTAG
廠商： ON SEMICONDUCTOR
元件分類： 電源管理
英文描述： Low Profile Overvoltage Protection IC with Integrated MOSFET
中文描述： 1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8
封裝： 3 X 2.50 MM, 0.55 MM HEIGHT, 0.65 MM PITCH, TLLGA-8
文件頁數(shù)： 3/10頁
文件大小： 117K
代理商： NUS3055MUTAG
NUS3055MUTAG
http://onsemi.com
3
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise stated)
Rating
Pin
Symbol
Min
Max
Unit
OUT Voltage to GND
7
V
O
0.3
30
V
Input and CNTRL Pin Voltage to GND
1
3
V
input
V
CNTRL
0.3
0.3
30
13
V
V
CC
Maximum Range
8
V
CC(max)
0.3
30
V
Maximum Power Dissipation
(
Note 1
)
P
D
1.0
W
Thermal Resistance JunctiontoAir
(
Note 1
)
OVP IC
PChannel FET
R
θ
JA
342
124
°
C/W
Junction Temperature
T
J
150
°
C
Operating Ambient Temperature
T
A
40
85
°
C
V
CNTRL
Operating Voltage
3
0
5.0
V
Storage Temperature Range
T
stg
65
150
°
C
ESD Performance (HBM)
(
Note 2
)
1, 2, 3, 7, 8
2.5
kV
DraintoSource Voltage
V
DSS
30
V
GatetoSource Voltage
V
GS
20
20
V
Continuous Drain Current, Steady State, T
A
= 25
°
C (Note 1)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surfacemounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 30157, (R = 1500 , C = 100 pF, F = 3 pulses delay 1 s).
I
D
1.0
A
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參數(shù)描述
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