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參數(shù)資料
| 型號： | NUP2301MW6T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MA Motion Sensor (Area Reflective Type) |
| 中文描述： | UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, CASE 419B-02, SC-88, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 89K |
| 代理商： | NUP2301MW6T1G |
Semiconductor Components Industries, LLC, 2005
January, 2005
Rev. 2
1
Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration
device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (2.0 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000
4
2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb
Free Package is Available
Applications
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
MAXIMUM RATINGS
(Each Diode)
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
I
F
70
Vdc
Forward Current
200
mAdc
Peak Forward Surge Current
I
FM(surge)
V
RRM
I
F(AV)
500
mAdc
Repetitive Peak Reverse Voltage
70
V
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
715
mA
Repetitive Peak Forward Current
I
FRM
I
FSM
450
mA
Non
Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
2.0
1.0
0.5
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR
5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP2301MW6T1
SC
88
3000/Tape & Reel
MARKING DIAGRAM
SC
88
CASE 419B
STYLE 23
68
d
68 = Specific Device Code
d
= Date Code
1
6
N/C
5
V
N
I/O
V
P
2
5
3
4
6
4
I/O
N/C
1
2
3
PIN CONFIGURATION
AND SCHEMATIC
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NUP2301MW6T1G
SC
88
(Pb
Free)
3000/Tape & Reel
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PDF描述 |
|---|---|
| NUP2301MW6T1D | Low Capacitance Diode Array for ESD Protection in Two Data Lines |
| NUP2301MW6T1 | Low Capacitance Diode Array for ESD Protection in Two Data Lines(在兩條數(shù)據(jù)線中用于進(jìn)行ESD保護(hù)的低電容二極管陣列) |
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