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參數(shù)資料
| 型號(hào)： | NUP2301MW6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Diode Array for ESD Protection in Two Data Lines(在兩條數(shù)據(jù)線中用于進(jìn)行ESD保護(hù)的低電容二極管陣列) |
| 中文描述： | UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | CASE 419B-02, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | NUP2301MW6T1 |
Semiconductor Components Industries, LLC, 2003
May, 2003 - Rev. 1
1
Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration
device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (2.0 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
MAXIMUM RATINGS
(Each Diode)
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
I
F(AV)
715
mA
Repetitive Peak Forward Current
I
FRM
450
mA
Non-Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
1. FR-5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP2301MW6T1
SC-88
3000/Tape & Reel
MARKING DIAGRAM
SC-88
CASE 419B
STYLE 23
http://onsemi.com
68
d
68 = Specific Device Code
d
= Date Code
O = Pin 1 Indicator
1
6
N/C
5
V
N
I/O
V
P
2
5
3
4
6
4
I/O
N/C
1
2
3
PIN CONFIGURATION
AND SCHEMATIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NUP2301MW6T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Two Data Lines |
| NUP2301MW6T1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Two Data Lines |
| NUP2301MW6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 2 Line RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP3112UPMU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Quad Transient Voltage Suppressor Array |
| NUP3112UPMUTAG | 功能描述:TVS二極管陣列 LOW CAP TVS ARRAY 3 LINE RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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