- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363671 > NTP22N06L (ON SEMICONDUCTOR) Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) PDF資料下載
參數(shù)資料
| 型號： | NTP22N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 22Amps, 60 Volts,Logic Level N-Channel TO-220(22A, 60 V,邏輯電平，N通道，TO-220封裝的功率MOSFET) |
| 中文描述： | 22 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NTP22N06L |
Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 0
1
Publication Order Number:
NTP22N06L/D
NTP22N06L, NTB22N06L
Power MOSFET
22 Amps, 60 Volts, Logic Level
N–Channel TO–220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (R
GS
= 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (t
p
Drain Current
– Continuous @ T
A
= 25
°
C
– Continuous @ T
A
= 100
°
C
– Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
10
20
10
μ
s)
I
D
I
D
I
DM
P
D
22
10
66
60
0.4
–55 to
+175
72
Adc
Apk
W
W/
°
C
°
C
T
J
, T
stg
Single Pulse Drain–to–Source Avalanche
Energy – Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH
I
L(pk)
= 12 A, V
DS
= 60 Vdc, R
G
= 25
)
E
AS
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
R
θ
JC
R
θ
JA
2.5
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
22 AMPERES
60 VOLTS
R
DS(on)
= 65 m
Device
Package
Shipping
ORDERING INFORMATION
NTP22N06L
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx22N06L = Device Code
x
= P or B
LL
= Location Code
Y
= Year
WW
= Work Week
NTx22N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx22N06L
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D
2
PAK
CASE 418B
STYLE 2
4
NTB22N06L
D
2
PAK
50 Units/Rail
NTB22N06LT4
D
2
PAK
800/Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTB23N03R | Power MOSFET 23 Amps, 25 Volts N-Channel(23A，25V，N通道的功率MOSFET) |
| NTB25P06 | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4 | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
| NTB25P06T4G | Power MOSFET −60 V, −27.5 A, P−Channel D2PAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTP2-3SH003 | 制造商:ITT Interconnect Solutions 功能描述:NTP2-3SH003 - Bulk |
| NTP-2401 | 制造商:Quest Technology International Inc 功能描述: |
| NTP-2402 | 制造商:QUEST TECHNOLOGY 功能描述:WHITE 4C RJ-11 SMOOTH FINISH WALLPLATE 制造商:Quest Tech. 功能描述:Connector Accessories 4 POS RJ-11 Wall Plate White |
| NTP-2403 | 制造商:Quest Technology International Inc 功能描述: |
| NTP27N06 | 功能描述:MOSFET 60V 27A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。