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參數(shù)資料
| 型號(hào)： | NTE909D |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuits Operational Amplifier |
| 中文描述： | 集成電路運(yùn)算放大器 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 27K |
| 代理商： | NTE909D |
NTE909 & NTE909D
Integrated Circuits
Operational Amplifier
Description:
These devices are monolithic operational amplifiers intended for general–purpose applications. Op-
eration is completely specified over the range of voltages commonly used for these devices. The de-
sign, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the
class–B output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unity–gain com-
pensation network specified will make the amplifiers unconditionally stable in all feedback configura-
tions, compensation can be tailored to optimize high–frequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift
at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the am-
plifier.
Absolute Maximum Ratings:
Supply Voltage
Power Dissipation (Note 1)
Differential Input Voltage
Input Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short–Circuit Duration (T
A
= +25
°
C)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (Soldering, 10 seconds)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 For operating at elevated temperatures, the device must be derated based on a 100
°
C maxi-
mum junction temperature and a thermal resistance 150
°
C/W junction to ambient or 45
°
C/W,
junction to case for the metal can package.
±
18V
250mW
±
10V
±
10V
5 seconds
–65
°
to +150
°
C
0
°
to +70
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300
°
C
Electrical Characteristics:
(0
°
C
≤
T
A
=
≤
+70
°
C,
±
9V
≤
V
S
≤
±
15V, C1 = 5000pF, R1 = 1.5k,
C2 = 200pF and R2 = 51
unless otherwise specified)
Parameter
Test Conditions
Min
–
–
–
–
–
–
Typ
2.0
300
0.36
100
75
125
Max
7.5
1500
2.0
500
400
750
Unit
mV
nA
μ
A
nA
nA
nA
Input Offset Voltage
Input Bias Current
T
A
= +25
°
C, R
S
≤
10k
T
A
= +25
°
C
T
A
= T
MIN
T
A
= +25
°
C
T
A
= T
MIN
T
A
= T
MAX
Input Offset Current
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