參數(shù)資料
型號(hào)： NTE90
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors General Purpose High Gain Amplifier
中文描述： 硅晶體管互補(bǔ)通用高增益放大器
文件頁數(shù)： 1/2頁
文件大?。?/td> 19K
代理商： NTE90
NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings:
(T
A
= +25
°
C)
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
120V
120V
5V
50mA
750mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
I
CBO
V
CB
= 100V, I
B
= 0
h
FE1
V
CE
= 12V, I
C
= 2mA
h
FE2
V
CE
= 12V, I
C
= 10mA
V
BE
V
CE
= 12V, I
C
= 2mA
V
CE(sat)
I
C
= 10mA, I
B
= 1mA
f
T
V
CE
= 12V, I
C
= 5mA
C
ob
V
CB
= 25V, I
E
= 0, f = 1MHz
Test Conditions
Min
Typ
Max Unit
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
120
120
–
400
125
–
–
–
–
–
–
–
–
–
–
–
–
–
V
V
μ
A
0.5
800
–
0.75
0.2
–
–
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Current Gain–Bandwidth Product
Collector Output Capacitance
V
V
350
1.6
MHz
pF
相關(guān)PDF資料
PDF描述
NTE912 Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)
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NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter
NTE918 Integrated Circuit High Speed Operational Amplifier
NTE918M Integrated Circuit High Speed Operational Amplifier
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