參數(shù)資料
型號(hào)： NTE89
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Color TV Horizontal Output w/Internal Damper Diode
中文描述： 硅NPN晶體管彩色電視產(chǎn)量的橫向w /內(nèi)置阻尼二極管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE89
NTE89
Silicon NPN Transistor
Color TV Horizontal Output
w
/Internal Damper Diode
Features:
Color TV Horizontal Output Applications
High Voltage: V
CBO
= 1500V
Low Saturation Voltage: V
CE(sat)
= 5V Max (I
C
= 5A, I
B
= 1A)
High Speed: t
f
= 1.0
μ
s Max
Built–In Damper Diode
Glass Passivated Collector–Base Junction
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V
600V
5V
6A
–6A
50W
+150
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter–Base Breakdown Voltage
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Forward Voltage (Damper Diode)
Transition Frequency
Collector Output Capacitance
Fall Time
Symbol
I
CBO
V
(BR)EBO
I
E
= 200mA, I
C
= 0
h
FE
V
CE
= 5V, I
C
= 1A
V
CE(sat)
I
C
= 5A, I
B
= 1A
V
BE(sat)
I
C
= 5A, I
B
= 1A
–V
F
I
F
= 6A
f
T
V
CE
= 10V, I
C
= 100mA
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
t
f
I
CP
= 5A, I
B1(end)
= 1A
Test Conditions
V
CB
= 500V, I
E
= 0
Min
–
5
8
–
–
–
–
–
–
Typ
–
–
12
3
–
1.6
3
165
0.5
Max
10
–
–
5
1.5
2.0
–
–
1.0
Unit
μ
A
V
V
V
V
MHz
pF
μ
s
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