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參數(shù)資料
| 型號(hào)： | NTE904 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) |
| 中文描述： | 集成電路通用晶體管陣列（兩個(gè)孤立的達(dá)林頓晶體管和連接晶體管配對(duì)） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | NTE904 |
NTE904
Integrated Circuit
General Purpose Transistor Array
(Two Isolated Transistors and a Darlington
Connected Transistor Pair)
Description:
The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub-
strate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
configuration. The substrate is connected to a separate terminal for maximum flexibility.
The transistors of the NTE904 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits but
in addition they provide the advantages of close electrical and thermal matching inherent in integrated
circuit construction.
Features:
Matched Monolithic General Purpose Transistors
Current Gain Matched to
±
10%
Base–Emitter Voltage Matched to
±
2mV
Operation from DC to 120MHz
Wide Operating Current Range
Low Noise Figure
Applications:
General use in Signal Processing Systems in DC through VHF Range
Custom Designed Differential Amplifiers
Temperature Compenstaed Amplifiers
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage (Each Transistor), V
CEO
Collector–Base Voltage (Each Transistor), V
CBO
Collector–Substrate Voltage (Each Transistor, Note 1), V
CIO
Emitter–Base Voltage (Each Transistor), V
EBO
Collector Current (Each Transistor), I
C
Power Dissipation, P
D
Any One Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total package
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 85
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin10) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.
15V
30V
40V
5V
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300mW
450mW
5mW/
°
C
–55
°
to +125
°
C
–65
°
to +150
°
C
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| NTE9093 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Integrated Circuit Diode Transistor Logic (DTL) Dual J-K Flip-Flop |
| NTE9094 | 制造商:NTE Electronics 功能描述:IC-DTL M/S J-K FLIP-FLOP 制造商:NTE Electronics 功能描述:DUAL J-K F/F DIP-14 |
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