參數(shù)資料
型號： NTE67
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Ch, Enhancement Mode High Speed Switch
中文描述： MOSFET的N溝道，增強模式高速開關(guān)
文件頁數(shù)： 2/3頁
文件大?。?/td> 26K
代理商： NTE67
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain
–
Source Breakdown Voltage
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 20V
V
GS
=
–
20V
V
DS
= Max. Rating, V
GS
= 0V
V
DS
= Max. Rating x 0.8, V
GS
= 0V,
T
C
= +125
°
C
V
DS
> I
D(on)
x R
DS(on)
max, V
GS
= 10V, Note 1
V
GS
= 10V, I
D
= 3A, Note 1
400
–
–
V
Gate Threshold Voltage
2.0
–
4.0
V
Gate
–
Source Leakage, Forward
–
–
100
nA
Gate
–
Source Leakage, Reverse
–
–
–
100
nA
μ
A
μ
A
Zero Gate Voltage Drain Current
–
–
250
–
–
1000
On
–
State Drain
–
Source Current
I
D(on)
R
DS(on)
4.5
–
–
A
Static Drain
–
Source On
–
State
Resistance
–
1.0
1.5
Forward Transconductance
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
V
DS
≥
50V, I
D
= 3A, Note 1
V
GS
= 0V, V
DS
= 25V, f = 1MHz
2.9
4.4
–
mhos
Input Capacitance
–
780
–
pF
Output Capacitance
–
99
–
pF
Reverse Transfer Capacitance
–
43
–
pF
Turn
–
On Delay Time
V
DD
= 0.5BV
DSS
, I
D
= 5.5A, Z
O
= 12
(MOSFET switching times are essentially
independent of operating temperature)
–
11
17
ns
Rise Time
–
19
29
ns
Turn
–
Off Delay Time
–
37
56
ns
Fall Time
–
16
24
ns
Total Gate Charge
(Gate
–
Source Plus Gate
–
Drain)
V
GS
= 10V, I
D
= 5.5A, V
DS
= 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
–
18
30
nC
Gate
–
Source Charge
Q
gs
Q
gd
–
40
–
nC
Gate
–
Drain (
“
Miller
”
) Charge
–
14
–
nC
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Source
–
Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current (Body Diode)
I
S
I
SM
V
SD
t
rr
–
–
4.5
A
Pulse Source Current (Body Diode)
Note 2
T
C
= +25
°
C, I
S
= 4.5A, V
GS
= 0V
T
J
= +25
°
C, I
F
= 5.5A, dI
F
/dt = 100A/
μ
s
–
–
18
A
Diode Forward Voltage
–
–
1.6
V
Reverse Recovery Time
–
310
660
ns
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
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