參數(shù)資料
型號(hào)： NTE6402
廠商： NTE Electronics, Inc.
英文描述： Programmable Unijunction Transistor (PUT)
中文描述： 可編程單結(jié)晶體管（看空）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 21K
代理商： NTE6402
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Peak Current
Symbol
I
P
Test Conditions
V
S
= 10V, R
G
= 1M
V
S
= 10V, R
G
= 10k
V
S
= 10V, R
G
= 1M
V
S
= 10V, R
G
= 10k
V
S
= 10V, R
G
= 1M
V
S
= 10V, R
G
= 10k
V
S
= 10V, R
G
= 200
V
S
= 40V, T
A
= +25
°
C
V
S
= 40V, T
A
= +75
°
C
V
S
= 40V, Anode
–
Cathode Short
I
F
= 50mA
Min
–
–
0.2
0.2
–
70
1.5
–
–
–
–
6
–
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
2
5
1.6
0.6
50
–
–
10
100
100
1.5
–
80
Unit
μ
A
μ
A
V
V
μ
A
μ
A
mA
nA
nA
nA
V
V
ns
Offset Voltage
V
T
Valley Current
I
V
Anode Gate
–
Anode Leakage Current
I
GAO
Gate
–
Cathode Leakage Current
Forward Voltage
Pulse Output Voltage
Pulse Voltage Rate of Rise
I
GKS
V
F
V
O
t
r
A G K
.190 (4.82) Min
.018 (0.45) Dia Max
.245
(6.23)
Max
.500
(12.7)
Min
.100 (2.54)
.200 (5.08) Max
.065
(1.65)
.140 (3.55) Max
.135 (3.45) Min
Seating
Plane
.021 (.445)
Dia Max
.210
(5.33)
Max
.500
(12.7)
Min
.050 (1.27)
.165 (4.2) Max
.105 (2.67) Max
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
A G K
TO92
TO98
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