參數(shù)資料
型號(hào)： NTE6403
廠(chǎng)商： NTE Electronics, Inc.
英文描述： Integrated Circuit Silicon Bilateral Switch (SBS)
中文描述： 硅集成電路雙邊開(kāi)關(guān)（SBS）的
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE6403
NTE6403
Integrated Circuit
Silicon Bilateral Switch (SBS)
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/
°
C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10
μ
s, Duty Cycle = 1%, T
A
= +25
°
C)
Peak Non–Recurrent Forward Current (PW = 10
μ
s, T
A
= +25
°
C)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Forward Anode Current (Note 1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Gate Current (Note 1, Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Derate linearly to zero at +125
°
C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
by maximum power rating.
1A
5A
. . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
300mW
175mA
5mA
–55
°
to +125
°
C
–65
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C, Note 3 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Switching Voltage
V
S
I
S
7.5
–
9.0
V
μ
A
mV
μ
A
mA
μ
A
μ
A
%/
°
C
V
μ
A
Switching Current
–
–
120
Absolute Switching Voltage Difference
|V
S2
– V
S1
|
|I
S2
– I
S1
|
I
H
I
B
–
–
200
Absolute Switching Current Difference
–
–
10
Holding Current
–
–
.5
OFF State Current
V
F
= 5V
T
A
= +25
°
C
T
A
= +85
°
C
–
–
0.1
–
–
10.0
Temperature Coefficient of Switching Voltage
T
C
V
F
I
GF
T
A
= –55
°
to +85
°
C
I
F
= 175mA
V
F
= 5V, R
L
= 1k
–
±
0.05
–
–
ON State Forward Voltage Drop
–
1.7
Forward Gate Current to Trigger
–
–
100
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.
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