參數(shù)資料
型號(hào)： NTE6400A
廠商： NTE Electronics, Inc.
英文描述： Unijunction Transistor
中文描述： 單結(jié)晶體管
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 19K
代理商： NTE6400A
Note 1. The intristic standoff ratio,
η
, is essentially constant with temperature and interbase volt-
age. It is defined by the following equation:
200
T
j
Where
V
P
=
Peak point emitter voltage
V
BB
=
Interbase voltage
T
j
=
Junction Temperature (Degrees Kelvin)
V
P
=
η
V
BB
+
Note 2. The interbase resistance is nearly ohmic and increases with temperature in a well
–
defined
manner. The temperature coefficient at +25
°
C is approximately 0.8%/
°
C.
45
°
.031 (.793)
.018 (0.45) Dia
B2
Emitter
B1
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260 (6.6)
Max
.500 (12.7)
Min
.210 (5.33) Dia Max
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