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參數(shù)資料
| 型號(hào)： | NTE63 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Gain, Low Noise Amp |
| 中文描述： | 硅NPN晶體管高增益，低噪聲放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 22K |
| 代理商： | NTE63 |
NTE63
Silicon NPN Transistor
High Gain, Low Noise Amp
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low
noise tuned and wiseband small–signal amplifiers and applications requiring fast switching times.
Features:
High Current Gain–Bandwidth Product: f
T
= 5GHz Typ @ f = 1GHz
High Power Gain: G
pe
= 12.5dB Min @ f = 1GHz
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
L
= +50
°
C), P
D
Derate Above 50
°
C
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Lead, R
thJL
12V
20V
2V
40mA
400mW
4.0mW/
°
C
–65
°
to +150
°
C
250
°
C/W
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Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
12
20
2
–
–
–
–
–
–
–
–
V
V
V
nA
50
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