參數(shù)資料
型號(hào)： NTE6363
廠商： NTE Electronics, Inc.
英文描述： Silicon Power Rectifier Diode, 300 Amp
中文描述： 硅功率整流二極管，300安培
文件頁(yè)數(shù)： 2/3頁(yè)
文件大小： 25K
代理商： NTE6363
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Average Forward Current
I
F(AV)
180
°
sinusoidal condition, T
C
= +130
°
C Max
300
A
Maximum Peak One
–
Cycle
Non
–
Repetitive Surge Current
I
FSM
t = 10ms
No voltage
reapplied
5000
A
t = 8.3ms
5200
A
t = 10ms
100% V
RRM
reapplied
3800
A
t = 8.3ms
Sinusoidal half wave,
Initial T
J
= T
J
max
4000
A
Maximum I
2
t for Fusing
I
2
t
t = 10ms
No voltage
reapplied
214000
A
2
s
t = 8.3ms
195000
A
2
s
Maximum I
2
t for Individual Device
Fusing
t = 10ms
100% V
RRM
reapplied
151000
A
2
s
t = 8.3ms
138000
A
2
s
Maximum I
2
t
I
2
t
t = 0.1 to 10ms, no voltage reapplied
2140000
A
2
t
Maximum Value of Threshold
Voltage
V
M (TO)
T
J
= +200
°
C
0.610
V
Maximum Value of Forward Slope
Resistance
r
t
T
J
= +200
°
C
0.751
m
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Operation Junction Temperature
T
J
–
40 to + 180
°
C
Maximum Storage Temperature
T
stg
–
55 to + 180
°
C
Maximum Internal Thermal Resistance
Junction
–
to
–
Case
R
thJC
DC operation
0.18
K/W
Thermal Resistance, Case
–
to
–
Sink
R
thCS
Mounting surface flat, smooth and
greased
0.08
K/W
Mounting Torque
T
Non
–
lubricated threads
40.06
(360)
m
N
(in
lb)
相關(guān)PDF資料
PDF描述
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