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參數(shù)資料
| 型號： | NTE622 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Rectifier, General Purpose, High Voltage, Fast Recovery (Surface Mount) |
| 中文描述： | 硅整流，通用，高電壓，快速恢復(fù)（表面貼裝） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | NTE622 |
NTE622
Silicon Rectifier, General Purpose, High Voltage,
Fast Recovery
(Surface Mount)
Features:
High Temperature Metallurgically Bonded
Glass Passivated Junction
High Temperature Soldering Guaranteed:
+450
°
C/5 Seconds at Terminals. Complete Device Submersible Temperature of
+260
°
C/10 Seconds in Solder Bath.
Maximum Ratings and Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified.
60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
Maximum RMS Voltage, V
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum DC Blocking Voltage, V
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Average Forward Rectified Current (T
T
= +75
°
C), I
T(AV)
Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine–Wave Superimposed on Rated Load)
Maximum Instantaneous Forward Voltage (I
T
= 0.5A), V
F
Maximum DC Reverse Current (V
DC
= 400V), I
R
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
A
= +125
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Recovery Time (T
J
= +25
°
C, Note 1), t
rr
Typical Junction Capacitance (Note 2), C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Terminal (Note 3), R
thJL
Maximum Thermal Resistance, Junction–to–Ambient (Note 4), R
thJA
400V
280V
400V
0.5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
10A
1.2V
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
μ
A
50
μ
A
50ns
4pF
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +175
°
C
–65
°
to +175
°
C
70
°
C/W
150
°
C/W
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
Note 1. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= 1A, I
RR
= 0.25A..
Note 2. Measured at 1MHz and applied reverse voltage of 4V
DC
.
Note 2. Thermal resistance, junction–to–terminal, 5.0mm
2
copper pads to each terminal.
Note 3. Thermal resistance, junction–to–ambient, 5.0mm
2
copper pads to each terminal.
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