參數(shù)資料
型號(hào)： NTE6236
廠商： NTE Electronics, Inc.
英文描述： Powerblock Module
中文描述： Powerblock模塊
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 24K
代理商： NTE6236
NTE6236
Powerblock Module
Description:
The NTE6236 uses 2 high voltage power diodes in series and the semiconductors are electrically
isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This
device is intended for general purpose applications such as battery chargers, welders and plating
equipment and where high voltage and high current are required.
Features:
High Voltage
Electrically Isolated Base Plate
3000V
RMS
Isolating Voltage
High Surge Capability
Large Creepage Distances
Ratings and Characteristics:
Average Forward Current (T
C
= +100
°
C, 180
°
Conduction, Half Sine Wave), I
F(AV)
Maximum RMS Forward Current (As AC Switch), I
T(RMS)
Maximum Repetitive Peak Reverse Voltage, V
RRM
Maximum Non–Repetitive Peak Reverse Voltage, V
RSM
Maximum Peak Reverse Current (T
J
= +150
°
C), I
RRM
RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), V
ISO
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case (Per Module, DC Operation), R
thJC
Thermal Resistance, Case–to–Sink (Per Module, Note 1), R
thCS
Note 1. Mounting surface flat, smooth and greased.
250A
393A
1600V
1700V
50mA
3000V
. . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .
–40
°
to +150
°
C
–40
°
to +150
°
C
0.16
°
C/W
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.02
°
C/W
Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Peak One–Cycle
Non–Repetitive Surge Current
I
FSM
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Sinusoidal Half Wave, 100% V
RRM
Reapplied, Initial T
J
= +150
C
°
5900
6180
7015
7345
A
A
A
A
Sinusoidal Half Wave, No Voltage
Reapplied, Initial T
J
= +150
C
°
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