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| 型號(hào)： | NTE392 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Complementary Transistors General Purpose |
| 中文描述： | 硅晶體管通用互補(bǔ) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | NTE392 |
NTE2967
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Applications:
Motor Control
Lamp Control
Solenoid Control
DC–DC Converter
Absolute Maximum Ratings:
(T
C
= +25
°
C unless otherwise specified)
Drain–Source Voltage (V
GS
= 0V), V
DSS
Gate–Source Voltage (V
DS
= 0V), V
GS
Drain Current, I
D
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Drain Current (Pulsed, L = 100
μ
H), I
DA
Source Current, I
S
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Channel Temperature Range, T
ch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Channel–to–Case, R
th(ch–c)
100V
±
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70A
280A
70A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70A
280A
150W
–55
°
to +150
°
C
–55
°
to +150
°
C
0.83
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
ch
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
(BR)DSS
I
GSS
I
DSS
V
GS(th)
R
DS(on)
V
DS(on)
|y
fs
|
V
DS
= 0V, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 100V, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
V
GS
= 10V, I
D
= 35A
100
–
–
V
μ
A
mA
Gate–Source Leakage
–
–
±
0.1
0.1
Zero Gate Voltage Drain Current
–
–
Gate Threshold Voltage
2.0
3.0
4.0
V
Static Drain–Source ON Resistance
–
14
20
m
V
Drain–Source On–State Voltage
–
0.49
0.70
Forward Transfer Admittance
–
53
–
S
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