參數(shù)資料
型號(hào)： NTE38
廠商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors High Voltage, Medium Power Switch
中文描述： 硅晶體管互補(bǔ)高壓，中功率開(kāi)關(guān)
文件頁(yè)數(shù)： 3/3頁(yè)
文件大?。?/td> 29K
代理商： NTE38
Electrical Characteristics (Cont’d):
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Second Breakdown
Second Breakdown Collector Current
NTE38
I
S/b
t = 1s (Non
–
Repetitive), V
CE
= 40V
V
CE
= 100V
875
–
–
mA
NTE175
350
–
–
mA
Switching Characteristics
NTE38
Rise Time
t
r
t
s
t
f
V
= 200V, I
= 1A
CC
I
B1
= I
B2
= 125mA
–
–
0.6
μ
s
μ
s
μ
s
Storage Time
C
–
–
2.5
Fall Time
–
–
0.6
NTE175
Rise Time
t
r
t
s
t
f
V
= 200V,
CC
I
C
= 1A
I
B1
= 100mA, R
L
= 200
I
B1
= I
B2
= 100mA
–
–
3.0
μ
s
μ
s
μ
s
Storage Time
–
–
4.0
Fall Time
–
–
3.0
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)
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