參數(shù)資料
型號: NTE3320
廠商: NTE Electronics, Inc.
英文描述: Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
中文描述: 絕緣柵雙極晶體管N溝道增強模式,高速開關
文件頁數(shù): 2/2頁
文件大?。?/td> 20K
代理商: NTE3320
G
C
E
Note:
Collector connected to heat sink.
.810(20.57)
Max
.204 (5.2)
.215 (5.45)
.236
(6.0)
1.030
(26.16)
.787
(20.0)
.137 (3.5)
Dia Max
.040 (1.0)
G
C
E
.098
(2.5)
.023
(0.6)
相關PDF資料
PDF描述
NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3323 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE335 Silicon NPN RF Power Transistor Designed for power amplifier
NTE336 Silicon NPN RF Power Transistor Designed for power amplifier
相關代理商/技術參數(shù)
參數(shù)描述
NTE3321 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3322 制造商:NTE Electronics 功能描述:IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:SINGLE IGBT 900V 60A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 900V, 60A 制造商:NTE Electronics 功能描述:60AMP 制造商:NTE Electronics 功能描述:SINGLE IGBT, 900V, 60A; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; No. of Pins:3; Continuous Collector Current Ic:60A ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin
NTE3323 制造商:NTE Electronics 功能描述:IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 1.2KV 25A 3-Pin
NTE332MCP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 100V V(BR)CEO | 15A I(C) | TO-220AB
NTE333 制造商:NTE Electronics 功能描述: 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 36V IC=15A PO=60W 14-30MHZ RF POWER PUTPUT