型號: | NTE3310 |
廠商: | NTE Electronics, Inc. |
英文描述: | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
中文描述: | 絕緣柵雙極晶體管N溝道增強模式,高速開關 |
文件頁數(shù): | 2/2頁 |
文件大小: | 18K |
代理商: | NTE3310 |
相關PDF資料 |
PDF描述 |
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NTE3311 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE3312 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE331 | Silicon Complementary Transistors Audio Power Amp, Switch |
NTE3320 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE3321 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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NTE3311 | 制造商:NTE Electronics 功能描述:TRANSISTORIGBTN-CHAN600V V( 制造商:NTE Electronics 功能描述:TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,25A 制造商:NTE Electronics 功能描述:IGBT 600V 15A 制造商:NTE Electronics 功能描述:TRANSISTOR,IGBT,N-CHAN,600V V(BR)CES,25A I(C),TO-247var 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3P |
NTE3312 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch |
NTE331MP | 制造商:NTE Electronics 功能描述:MATCH PAIR OF NTE331 |
NTE332 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 100V IC=15A TO-220 CASE COMP'L TO NTE331 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -100V TO-220 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220 制造商:NTE Electronics 功能描述:T-PNP-SI-AF PO-REG-SW 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -100V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:-15A; DC Current Gain hFE:40; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 100V 15A 3-Pin(3+Tab) TO-220 |
NTE3320 | 制造商:NTE Electronics 功能描述:SINGLE IGBT 600V 50A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 600V, 50A 制造商:NTE Electronics 功能描述:TO-247 N-CH 600V 50A 制造商:NTE Electronics 功能描述:SINGLE IGBT, 600V, 50A; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3; Continuous Collector Current Ic:50A ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans IGBT Chip N-CH 600V 50A 3-Pin(3+Tab) TO-3P |