參數(shù)資料
型號： NTE2638
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Darlington
中文描述： 硅NPN晶體管達(dá)林頓
文件頁數(shù)： 2/3頁
文件大?。?/td> 24K
代理商： NTE2638
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector
–
Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
CEX(sus)
I
CEO
I
EBO
h
FE
I
C
= 1mA, I
E
= 0, Note 3
I
C
= 10mA, I
B
= 0, Note 3
I
C
= 7A
V
CE
= 400V, I
B
= 0
V
EB
= 8V, I
C
= 0
I
C
= 2.5A, V
CE
= 5V, Note 3, Note 4
I
C
= 5A, V
CE
= 5V, Note 3, Note 4
I
C
= 7A, V
CE
= 5V, Note 3, Note 4
I
B
= 100mA, I
C
= 2A, Note 3, Note 4
I
B
= 250mA, I
C
= 5A, Note 3, Note 4
I
B
= 10mA, I
C
= 1A, Note 3, Note 4
I
B
= 100mA, I
C
= 2A, Note 3, Note 4
I
B
= 250mA, I
C
= 5A, Note 3, Note 4
I
F
= 7A, Note 3, Note 4
V
CE
= 5V, I
C
= 500mA, f = 1kHz
V
CE
= 5V, I
C
= 500mA, f = 1kHz
400
–
–
V
Collector
–
Emitter Breakdown Voltage
400
–
–
V
Collector
–
Emitter Sustaining Voltage
400
–
–
V
μ
A
mA
Collector Cutoff Current
–
–
250
Emitter Cutoff Current
DC Current Gain
–
–
–
–
–
15
–
–
–
150
50
15
Base
–
Emitter Voltage
V
BE
–
–
2.2
V
–
–
–
–
–
–
–
–
–
–
–
–
2.3
1.5
1.5
2.0
3.5
–
–
V
V
V
V
V
Collector
–
Emitter Saturation
Voltage
V
CE(sat)
Diode Forward Voltage
Small
–
Signal Current Gain
Small
–
Signal Forward Current
Transfer Ratio
Collector Capacitance
Resistive–Load Switching Characteristics
(T
C
= +25
°
C unless otherwise specified)
Turn
–
Off Storage Time
t
s
Turn
–
Off Fall Time
t
f
Turn
–
Off Rise Time
t
r
Turn
–
On Delay Time
t
d
Inductive–Load Switching Characteristics
(T
C
= +25
°
C unless otherwise specified)
Voltage Storage Time
t
sv
Current Storage Time
t
si
Voltage Rise Time
t
rv
Storage Rise Time
t
ri
Turn
–
Off Crossover Time
t
xo
V
F
h
fe
|h
fe
|
200
10
C
obo
I
E
= 0, V
CB
= 10V, f = 1MHz
–
–
100
pF
I
C
= 5A, I
B1
= 250mA,
I
B2
=
–
250mA, V
BE(off)
=
–
7.3V,
R = 50
, Note 5
–
–
–
–
3400
1520
160
20
–
–
–
–
ns
ns
ns
ns
V
(clamp)
= Min V
CEX(sus)
, I
CM
= 5A,
I
B1
= 250mA, I
B2
=
–
250mA,
Note 5
–
–
–
–
–
3900
4700
1200
1200
2000
–
–
–
–
–
ns
ns
ns
ns
ns
Note 3. These parameters must be measured using pulse techniques, t
w
= 300
μ
s, duty cycle
≤
2%.
Note 4. These parameters are measured with voltage
–
sensing contacts separate from the current
–
carrying contacts located within 1/8
”
(3.2mm) from the device body.
Note 5. Voltage and current values shown are nominal; exact values vary slightly with transistor pa-
rameters.
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