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參數(shù)資料
| 型號： | NTE2641 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs |
| 中文描述： | 硅NPN晶體管水平偏轉(zhuǎn)輸出高分辨率顯示器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE2641 |
NTE2641
Silicon NPN Transistor
Horizontal Deflection Output for
High Resolution Displays & Color TVs
Features:
High Voltage: V
CBO
= 1500V
Low Saturation Voltage: V
CE(sat)
= 3V Max
High Speed: t
f
= 0.1
μ
s Typ
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulse
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1500V
750V
5V
17A
34A
8.5A
75W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 2A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 14A
I
C
= 14A, I
B
= 3.5A
I
C
= 14A, I
B
= 3.5A
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, I
E
= 0, f = 1MHz
–
–
1
mA
μ
A
V
Emitter Cutoff Current
–
–
100
Collector–Emitter Breakdown Voltage
V
(BR)CEO
h
FE
750
–
–
DC Current Gain
22
–
48
9
–
18
5
–
8
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE(sat)
f
T
C
ob
–
–
3
V
Base–Emitter Saturation Voltage
–
1.0
1.5
V
Transition Frequency
–
2
–
MHz
Collector Output Capacitance
–
240
–
pF
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