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參數(shù)資料
| 型號(hào)： | NTE2553 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor Darlington, Motor Driver, Switch |
| 中文描述： | 硅NPN晶體管達(dá)林頓，電機(jī)驅(qū)動(dòng)器，開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | NTE2553 |
NTE104
Germanium PNP Transistor
Audio Frequency Power Amplifier
Description:
The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (R
BE
= 68
), V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
≤
+55
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain
specification (h
FE
) matched to within 10% of each other.
50V
35V
10V
10A
10A
3A
90W
+100
°
C
–55
°
to +100
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
(BR)CER
I
C(peak)
= –0.6A, R
BE
= 68
35
–
–
V
Collector Cutoff Current
I
CBO
V
CB
= 30V, I
E
= 0
–
–
1.0
mA
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 20mA
50
90
165
Base–Emitter Input Voltage
V
BE
V
CE
= 2V, I
C
= 1A
–
0.38
–
V
Collector–Emitter Saturation Voltage
V
CE(sat)
I
C
= 4A, I
B
= 0.4A
–
0.29
–
V
Transition Frequency
f
T
V
CB
= 2V, I
E
= 1A
–
300
–
kHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2554 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon Complementary Transistors Darlington Driver |
| NTE2555 | 制造商:NTE Electronics 功能描述: |
| NTE2556 | 制造商:NTE Electronics 功能描述:T-NPN-SI DARL MOTR DRIVER |
| NTE2557 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON DARLINGOTN 200V IC=15A HIGH VOLTAGE SWITCH POWER AMPLIFIE |
| NTE2558 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON DARLINGTON 1500V IC=15A HIGH SPEED SWITCH WITH DAMPER DIO |
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