參數(shù)資料
型號: NTE105
廠商: NTE Electronics, Inc.
英文描述: Germanium PNP Transistor Audio Power Amp
中文描述: 鍺PNP晶體管音頻功率放大器
文件頁數(shù): 1/2頁
文件大?。?/td> 22K
代理商: NTE105
NTE105
Germanium PNP Transistor
Audio Power Amp
Description:
The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power
switching and amplifier applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CES
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Continuous Base Current, I
B
Continuous Emitter Current, I
E
Total Device Dissipation (T
C
= +25
°
C), P
D
Operating Junction Temperature Range, T
J
Thermal Resistance, Junction–to–Case, R
thJC
40V
40V
20V
4A
15A
150W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +100
°
C
0.5
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
EBF
I
CBO
I
C
= 1A, I
B
= 0, Note 1
I
C
= 300mA, V
BE
= 0, Note 1
V
CB
= 40V, I
E
= 0
V
CB
= 2V, I
E
= 0
V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
B
= +71
°
C
V
BE
= 20V, I
C
= 0
25
V
40
V
Floating Potential
1.0
V
Collector Cutoff Current
0.1
mA
2.0
8.0
mA
15
mA
Emitter Cutoff Current
I
EBO
1.0
8.0
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 5A
V
CE
= 2V, I
C
= 12A
I
C
= 12A, I
B
= 2A
V
CE
= 2V, I
C
= 5A
20
40
20
Collector–Emitter Saturation Voltage
V
CE(sat)
V
BE
0.3
V
Base–Emitter Voltage
0.65
V
Note 1. Pulse test: Pulse Width
300
μ
s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
NTE1060 Integrated Circuit AM-RF Amp, Mix/OSC, FM-AM IF Amp
NTE1072 Integrated Circuit FM-AM IF Amp & AF Amp
NTE107 Silicon NPN Transistor UHF Oscillator for Tuner
NTE1080 Integrated Circuit TV Video Processor
NTE1083 Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE1050 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC
NTE1051 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC
NTE1052 制造商:NTE Electronics 功能描述:AUDIO PREAMP/EQUALIZER
NTE1053 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
NTE1054 制造商:NTE Electronics 功能描述:IC-AM/FM IF AMP