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參數(shù)資料
| 型號： | NTE2398 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | MOSFET N-Ch, Enhancement Mode High Speed Switch |
| 中文描述： | MOSFET的N溝道，增強模式高速開關(guān) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 28K |
| 代理商： | NTE2398 |
NTE2398
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Features:
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Absolute Maximum Ratings:
Continuous Drain Current (V
GS
= 10V), I
D
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed Drain Current (Note 1), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Linearly Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–to–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy (Note 2), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche Current (Note 1), I
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Avalanche Energy (Note 1), E
AR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Diode Recovery dv/dt (Note 3), dv/dt
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1.6mm from case for 10sec), T
L
Mounting Torque (6–32 or M3 Screw)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
Typical Thermal Resistance, Case–to–Sink (Flat, Greased Surface), R
thCS
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. V
DD
= 50V, starting T
J
= +25
°
C, L = 24mH, R
G
= 25
, I
AS
= 4.5A
Note 3. I
SD
≤
4.5A, di/dt
≤
75A/
μ
s, V
DD
≤
V
(BR)DSS
, T
J
≤
+150
°
C
4.5A
2.9A
18A
74W
0.59W/
°
C
±
20V
280mJ
4.5A
7.4mJ
3.5V/ns
–55
°
to +150
°
C
–55
°
to +150
°
C
+300
°
C
. . . . . . . . . . . . . . . . .
10 lbf in (1.1N m)
1.7
°
C/W
62
°
C/W
0.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
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