參數(shù)資料
型號： NTE2390
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Channel Enhancement Mode, High Speed Switch
中文描述： MOSFET的N溝道增強模式，高速開關(guān)
文件頁數(shù)： 2/3頁
文件大?。?/td> 25K
代理商： NTE2390
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Drain
–
Source Breakdown Voltage
V
(BR)DSS
I
DSS
I
D
= 0.25mA, V
GS
= 0
V
GS
= 0, V
DS
= Max Rating
V
GS
= 0, V
DS
= 48V, T
J
= +125
°
C
V
DS
= 0, V
GSF
= 20V
V
DS
= 0, V
GSR
= 20V
60
–
–
V
Zero
–
Gate Voltage Drain Current
–
–
0.2
mA
–
–
1.0
mA
Gate
–
Body Leakage Current, Forward
I
GSSF
I
GSSR
–
–
100
nA
Gate
–
Body Leakage Current, Reverse
–
–
100
nA
ON
Characteristics
(Note 1)
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1mA, T
J
= +100
°
C
V
GS
= 10V, I
D
= 6A
V
GS
= 10V, I
D
= 12A
V
GS
= 10V, I
D
= 6A, T
J
= 100
°
C
V
DS
= 15V, I
D
= 6A
2.0
–
4.5
V
1.5
–
4.0
V
Static Drain
–
Source On Resistance
r
DS(on)
V
DS(on)
–
–
0.2
Drain
–
Source ON
–
Voltage
–
–
–
3.0
V
–
2.8
V
Forward Transconductance
g
fs
4
–
–
mhos
Dynamic Characteristics
Input Capactiance
C
iss
C
oss
C
rss
V
DS
= 25V, V
GS
= 0,
f = 1MHz
–
–
400
pf
Output Capacitance
–
–
300
pf
Reverse Transfer Capactiance
Switching Characteristics
(T
J
= +100
°
C, Note 1)
Turn
–
On Time
–
–
100
pf
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 25V, I
D
= 0.5 Rated I
D
,
R
gen
= 50
–
–
60
ns
Rise Time
–
–
160
ns
Turn
–
Off Delay Time
–
–
80
ns
Fall Time
–
–
110
ns
Total Gate Charge
V
DS
= 48V, V
GS
= 10V,
I
D
= Rated I
D
–
13
26
nC
Gate
–
Source Charge
–
6
–
nC
Gate
–
Drain Charge
–
7
–
nC
Source Drain Diode Characteristics
(Note 1)
Forward ON Voltage
V
SD
t
on
t
rr
I
S
= Rated I
D
, V
GS
= 0
–
1.8
3.2
V
Forward Turn
–
On Time
Limited by stray inductance
Reverse Recovery Time
–
300
–
ns
Internal Package Inductance
Internal Drain Inductance
L
d
Measured from the contact screw
on tab to center of die
–
3.5
–
nH
Measured from the drain lead 0.25
”
from package to center of die
–
4.5
–
nH
Internal Source Inductance
L
s
Measured from the source lead
0.25
”
from package to source bond
pad
–
7.5
–
nH
Note 1. Pulse test: Pulse width
≤
300
μ
s, Duty cycle
≤
2%.
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