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參數(shù)資料
| 型號(hào)： | NTE2319 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage, High Speed Power Switch |
| 中文描述： | 硅NPN晶體管高壓，高速電源開關(guān) |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 26K |
| 代理商： | NTE2319 |
NTE2319
Silicon NPN Transistor
High Voltage, High Speed Power Switch
Description:
The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
switchmode applications.
Features:
Fast Turn–On Times @ T
C
= +100
°
C:
Inductive Fall Time: 50ns Typ
Inductive Crossover Time: 90ns Typ
Inductive Storage Time: 800ns Typ
100
°
C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Current
Applications:
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage, V
CEV
Emitter–Base Voltage, V
EB
Collector Current, I
C
Continuous
Peak (Note 1)
Base Current, I
B
Continuous
Peak (Note 1)
Total Device Dissipation, P
D
T
C
= +25
°
C
T
C
= +100
°
C
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
L
Note 1. Pulse Test: Pulse Width
≤
5
μ
s, Duty Cycle
≥
10%.
450V
850V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15A
20A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A
15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175W
100W
1W/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
–65
°
to +200
°
C
1
°
C/W
+275
°
C
. . . . . . . . . . . . . . . . . . . . . . .
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2319MP | 制造商:NTE Electronics 功能描述:MATCH PAIR OF NTE2319 |
| NTE232 | 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 30V IC=0.3A TO-92 CASE DARLINGTON AMP/PRE-AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR PNP -30V 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -30V 制造商:NTE Electronics 功能描述:T-PNP- SI-DARL AMP 制造商:NTE Electronics 功能描述:TO-92 PNP DARL AMP 制造商:NTE Electronics 功能描述:BIPOLAR TRANSISTOR, PNP, -30V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:625mW; DC Collector Current:300mA; DC Current Gain hFE:800; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans Darlington PNP 30V 0.3A 3-Pin TO-92 |
| NTE2320 | 制造商:NTE Electronics 功能描述:SI-QUAD AMP |
| NTE2321 | 制造商:NTE Electronics 功能描述:QUAD TRANSISTOR NPN SILICON 60V IC=0.5A 14-LEAD DIP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:T-NPN-SI-QUAD GEN PURP 制造商:NTE Electronics 功能描述:TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:1.6V; Transition Frequency Typ ft:350MHz; Power Dissipation Pd:1.9W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Min:-65C ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 30V 0.5A 14-Pin DIP |
| NTE2322 | 制造商:NTE Electronics 功能描述:QUAD TRANSISTOR PNP SILICON 60V IC=0.6A 14-LEAD DIP 制造商:NTE Electronics 功能描述:Bulk 制造商:NTE Electronics 功能描述:BIPOLAR TRANS PNP QUAD -40V DIP 制造商:NTE Electronics 功能描述:BIPOLAR TRANS, PNP, QUAD, -40V, DIP 制造商:NTE Electronics 功能描述:T-PNP-SI QUAD GEN PURPOSE 制造商:NTE Electronics 功能描述:BIPOLAR TRANS, PNP, QUAD, -40V, DIP; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:650mW; DC Collector Current:600mA; DC Current Gain hFE:100; No. of Pins:14;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 40V 0.6A 14-Pin DIP |
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