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參數(shù)資料
| 型號： | NTE2314 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) |
| 中文描述： | 硅PNP晶體管高電流，高速開關(guān)（并發(fā)癥的NTE2304） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE2314 |
NTE2314
Silicon PNP Transistor
High Current, High Speed Switch
(Compl to NTE2304)
Description:
The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay
drivers, high–speed inverters, converters, and other general high–current switching applications.
Features:
Low Collector–Emitter Saturation Voltage
Wide ASO and Resistant to Breakdowns
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Allowable Collector Dissipation (T
C
= +25
C ), P
C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Ambient Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
60V
50V
6V
15A
20A
90W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
h
FE
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 8A
V
CE
= 5V, I
C
= 1A
I
C
= 8A, I
B
= 0.4A
I
C
= 1mA, I
E
= 0
I
C
= 1mA, R
BE
=
∞
I
E
= 1mA, I
C
= 0
10I
B1
= –10I
B2
= I
C
= 2A,
PW = 20
μ
s
–
–
0.1
mA
Emitter Cutoff Current
–
–
0.1
mA
DC Current Gain
100
–
200
30
–
–
Current Gain–Bandwidth Product
f
T
–
20
–
MHz
Collector–Emitter Saturation Voltage
V
CE(sat)
V
(BR)CBO
V
(BR)CBO
V
(BR)EBO
t
on
t
stg
t
f
–
0.26
0.5
V
Collector–Base Breakdown Voltage
60
–
–
V
Collector–Emitter Breakdown Voltage
50
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
μ
s
μ
s
μ
s
Turn–On Time
–
0.2
–
Storage Time
–
0.5
–
Fall Time
–
0.1
–
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|---|---|
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