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參數(shù)資料
| 型號(hào)： | NTE194 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual Differential Comparator 8-SOIC -25 to 85 |
| 中文描述： | 硅NPN晶體管音頻功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE194 |
NTE194
Silicon NPN Transistor
Audio Power Amplifier
Description:
The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate above 25
°
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
160V
180V
6V
600mA
350mW
2.8mW/
°
C
1.0W
8.0mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
125
°
C/W
357
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 1mA, I
B
= 0, Note 2
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100
°
C
V
EB
= 4V, I
C
= 0
180
–
–
V
Collctor–Base Breakdown Voltage
180
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
Collector Cutoff Current
–
–
50
nA
–
–
50
nA
Emitter Cutoff Current
I
EBO
–
–
50
nA
Note 2 Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2.0%.
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