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參數(shù)資料
| 型號： | NTE195A |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Dual Differential Comparator 8-PDIP -25 to 85 |
| 中文描述： | 硅NPN晶體管射頻功率放大器/驅(qū)動器，文件 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | NTE195A |
NTE195A
Silicon NPN Transistor
RF Power Amp/Driver, CB
Description:
The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use
in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a
high percentage of up–modulation in AM circuits.
Features:
Specified 12.5V, 28MHz Characteristic:
Power Output = 3.5W
Power Gain
Efficiency
= 10dB
= 70% Typical
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CER
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current–Continuous, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate above 25
°
C
Storage Temperature Range, T
stg
70V
70V
3.0V
1.5A
8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
28.6mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CES
I
C
= 200mA, V
BE
= 0
V
(BR)EB
O
I
CBO
V
CB
= 15V, I
E
= 0
70
–
–
V
Emitter–Base Breakdown Voltage
I
E
= 1mA, I
C
= 0
4
–
–
V
Collector Cutoff Current
–
–
0.01
mA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 2V, I
C
= 400mA
30
–
–
–
Dynamic Characteristics
Capacitance
C
ob
V
CB
= 12.5V, I
E
= 0, f = 1MHz
–
35
70
pF
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