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參數(shù)資料
| 型號： | NTE193A |
| 廠商： | NTE Electronics, Inc. |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE193A |
NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current (Note 1), I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C, Note 1), P
T
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±
1/32” from case for 10sec max), T
L
Note 1. Determined from power limitations due to saturation voltage at this current.
50V
50V
5V
500mA
900mW
7.2mW/
°
C
560mW
4.47mW/
°
C
+150
°
C
–55
°
to +150
°
C
. . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DC Characteristics
Collector Cutoff Current
I
CBO
V
CB
= 50V
V
CB
= 50V, T
A
= +100
°
C
V
EB
= 5V
I
B
= 3mA, I
C
= 50mA
I
B
= 3mA, I
C
= 50mA
V
CE
= 4.5V, I
C
= 2mA
–
–
–
–
–
–
–
–
–
–
–
0.1
15
0.1
0.30
0.85
540
μ
A
μ
A
μ
A
V
V
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
180
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE192 | Silicon Complementary Transistors Audio Power Output |
| NTE192A | |
| NTE193 | |
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| NTE194 | Dual Differential Comparator 8-SOIC -25 to 85 |
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