參數(shù)資料
型號(hào)： NTE175
廠商： NTE Electronics, Inc.
英文描述： 2.5-V Integrated Reference Circuit 8-SOIC 0 to 70
中文描述： 硅晶體管互補(bǔ)高壓，中功率開(kāi)關(guān)
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 29K
代理商： NTE175
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
(Note 2)
Collector
–
Emitter Sustaining Voltage
NTE38
NTE175
V
CEO(sus)
I
C
= 200mA, I
B
= 0
350
300
–
–
–
–
V
V
Collector
–
Emitter Sustaining Voltage
NTE38 Only
V
CEX(sus)
V
CER(sus)
I
C
= 200mA, I
B
= 0, R
BE
= 50
I
C
= 200mA, V
BE
=
–
1.5V, L = 10mH
400
–
–
V
375
–
–
V
Emitter
–
Base Breakdown Voltage
NTE38 Only
Collector Cutoff Current
V
EBO
I
CEO
I
E
= 0.5mA, I
C
= 0
V
CE
= 150V, I
B
= 0
6
–
–
–
–
5
V
mA
Collector Cutoff Current
NTE38
I
CEV
V
CE
= 250V, V
BE(off)
= 1.5V
V
CE
= 250V, V
BE(off)
= 1.5V, T
C
= +100
°
C
V
CE
= 315V, V
BE(off)
= 1.5V
V
CE
= 315V, V
BE(off)
= 1.5V, T
C
= +100
°
C
V
CE
= 360V, V
BE(off)
= 1.5V
V
CE
= 360V, V
BE(off)
= 1.5V, T
C
= +100
°
C
V
CE
= 450V, V
BE(off)
= 1.5V
V
CE
= 300V, V
BE(off)
= 1.5V, T
C
= +150
°
C
V
EB
= 6V, I
C
= 0
–
–
–
–
0.5
5.0
mA
mA
–
–
0.5
mA
–
–
5.0
mA
–
–
0.5
mA
–
–
5.0
mA
NTE175
I
CEX
–
–
1.0
mA
–
–
3.0
mA
Emitter Cutoff Current
I
EBO
–
–
0.5
mA
ON Characteristics
(Note 2)
DC Current Gain
NTE38
NTE175
h
FE
I
C
= 1A, V
CE
= 4V
I
C
= 0.1A, V
CE
= 10V
I
C
= 1A, V
CE
= 2V
I
C
= 1A, V
CE
= 10V
10
40
–
–
100
–
8
–
80
25
–
100
Collector
–
Emitter Saturation Voltage
NTE38
V
CE(sat)
I
C
= 1A, I
B
= 125mA
–
–
2.0
V
NTE175
–
–
0.75
V
Base
–
Emitter Saturation Voltage
NTE38
NTE175
V
BE(sat)
I
C
= 1A, I
B
= 125mA
I
C
= 1A, I
B
= 100mA
–
–
–
–
1.4
1.4
V
V
Base
–
Emitter ON Voltage
NTE175 Only
V
BE(on)
I
C
= 1A, V
CE
= 10V
–
–
1.4
V
Dynamic Characteristics
Current Gain
–
Bandwidth Product
NTE38
NTE175
f
T
I
= 200mA, V
= 10V, f
= 5MHz,
C
CE
Note 3
20
15
–
–
–
–
MHz
MHz
test
Output Capacitance (NTE175 Only)
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
–
–
120
pF
Note 2. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
Note 3. f
T
= |h
fe
| f
test
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