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參數(shù)資料
| 型號(hào)： | NTE130 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Power Transistor Audio Power Amp, Medium Speed Switch |
| 中文描述： | 硅功率晶體管音頻功率放大器，中速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 24K |
| 代理商： | NTE130 |
NTE130 (NPN) & NTE219 (PNP)
Silicon Power Transistor
Audio Power Amp, Medium Speed Switch
Description:
The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case
designed for general purpose switching and amplifier applications.
Features:
DC Current Gain: h
FE
= 20 – 70 @ I
C
= 4A
Collector–Emitter Saturation Voltage: V
CE(sat)
= 1.1V (Max) @ I
C
= 4A
Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Emitter Voltage, V
CER
Collector–Base Voltage, V
CB
Emitter–Base Voltage, V
EB
Continuous Collector Current, I
C
Base Current, I
B
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
60V
70V
100V
7V
15A
7A
115W
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0.657W/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
1.52
°
C/W
Electrical Characteristics:
(T
C
=+25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
V
CER(sus)
I
C
= 200mA, R
BE
= 100
, Note 1
I
CEO
V
CE
= 30V, I
B
= 0
I
CEX
V
CE
= 100V, V
BE(off)
= 1.5V
V
CE
= 100V, V
BE(off)
= 1.5V, T
C
= +150
°
C
I
EBO
V
BE
= 7V, I
C
= 0
60
–
–
V
Collector–Emitter Sustaining Voltage
70
–
–
V
Collector Cutoff Current
–
–
0.7
mA
–
–
1.0
mA
–
–
5.0
mA
Emitter Cutoff Current
–
–
5.0
mA
Note 1. Pulse Test: Pulse Width
≤
300
μ
s. Duty Cycle
≤
2%.
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