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參數(shù)資料
| 型號： | NTE131 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Germanium Complementary Transistors Audio Power Amplifier |
| 中文描述： | 鍺晶體管互補音頻功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE131 |
NTE131 (PNP) & NTE155 (NPN)
Germanium Complementary Transistors
Audio Power Amplifier
Description:
The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese
TO66 type package designed for use in audio power amplifier applications.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32V
32V
10V
1A
200mA
6W
+90
°
C
–55
°
to +90
°
C
Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (h
FE
) matched to within
10% of each other.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CEV
I
EBO
h
FE1
h
FE2
f
α
e
V
BE
V
CE(sat)
V
CE
= 32V, V
EB
= 1V
V
EB
= 10V, I
C
= 0
V
CB
= 0, I
E
= 100mA
V
CB
= 0, I
E
= 1A
V
CB
= 2V, I
E
= 100mA
V
CB
= 0, I
E
= 1A
I
C
= 1A, I
B
= 100mA
–
–
1
mA
Emitter Cutoff Current
–
–
1
mA
DC Current Gain
35
–
170
36
–
185
Common–Emitter Cutoff Frequency
10
15
–
kHz
Base–Emitter ON Voltage
–
0.4
–
V
Collector–Emitter Saturation Voltage
–
0.08
–
V
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|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE1311 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| NTE1312 | 制造商:NTE Electronics 功能描述: |
| NTE1315 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| NTE1316 | 制造商:NTE Electronics 功能描述:MOD-AF PO 50WATT 制造商:NTE Electronics 功能描述:Integrated Circuit Module 18-Pin SIP |
| NTE1317 | 制造商:NTE Electronics 功能描述:MOD-AF PO 50WATT 制造商:NTE Electronics 功能描述:SIP-18 DUAL AF PO 制造商:NTE Electronics 功能描述:AF Power Amplifier 18-Pin SIP |
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