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參數(shù)資料
| 型號： | NTE108 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Frequency Amplifier |
| 中文描述： | 硅NPN晶體管高頻放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE108 |
NTE108
Silicon NPN Transistor
High Frequency Amplifier
Description:
The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency
amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise
and fall times less than 2.5ns.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient (Note 1), R
thJA
15V
30V
3V
50mA
625mW
12mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
–55
°
to +150
°
C
–55
°
to +150
°
C
+83.3
°
C/W
+200
°
C/W
Note 1. R
Θ
JA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 3mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 1
μ
A, I
E
= 0
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
15
30
3
–
–
–
–
–
–
–
–
V
V
V
nA
10
Note 2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 1%.
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