
NTE109
Germanium Diode
Fast Switching General Purpose
Description:
The NTE109 is a high conductance device with good switching characteristics for low impedance cir-
cuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and for-
ward and inverse pulse recovery for critical pulse applications.
Absolute Maximum Ratings:
(T
A
= +25
°
C unles otherwise specified)
Continuous Inverse Operating Voltage (Note 1), V
cont
Continuous Average Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Recurrent Forward Current (Note 2)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Surge Current (1 sec), I
FSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Peak Reverse Voltage, P
RV
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Drop (I
F
= 200mA), V
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Reverse Leakage (V
R
= 50V), I
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Additional Specifications:
Ambient Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Storage Temperature Range, T
stg
Average Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Shunt Capacitance
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average 100mc Rect. Efficient
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1 The continuous inverse operating voltage rating, V
cont
must be reduced when the diode is
operated at elevated junction temperature. The percent derating of V
cont
for each 10
°
C tem-
perature increment above 25
°
C is equal to V
cont
/10. For critical high temperature–high volt-
age applications, is recommended that diodes be 100% tested and specified at the elevated
temperature.
Note 2 The peak operating current is generally the controlling factor in AC rectifier service and may
be exceeded for pulses of less than 200
μ
s duration.
80V
60mA
325mA
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
1.0V
100
μ
A
–78
°
to +90
°
C
–78
°
to +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . .
80mW
10mW/10
°
C
0.5
μ
fd
55%
Color Band Denotes Cathode
1.000
(25.4)
Min
.300
(7.63)
Typ
.107 (2.72) Dia Max
.022 (.509) Dia Max