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參數(shù)資料
| 型號： | NTE102 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Germanium Complementary Transistors Power Output, Driver |
| 中文描述： | 鍺晶體管互補功率輸出，驅(qū)動器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | NTE102 |
NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for me-
dium–speed saturated switching applications.
Features:
Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 200mV Max @ I
C
= 24mA
High Emitter–Base Breakdown Voltage:
V
(BR)EBO
= 12V Min @ I
E
= 20
μ
A
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CES
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Emitter Current, I
E
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above +25
°
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above +25
°
Operating Junction Temperature Range, T
J
Storage Junction Temperature Range, T
stg
25V
24V
12V
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150mA
100mA
150mW
2mW/
°
C
300mW
4mW/
°
C
–65
°
to +100
°
C
–65
°
to +100
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)EBO
V
PT
I
CBO
I
C
= 20
μ
A, I
E
= 0
I
E
= 20
μ
A, I
C
= 0
V
EBfl
= 1V, Note 1
V
CB
= 12V, I
E
= 0
V
CB
= 12V, I
E
= 0, T
A
= +80
°
C
V
EB
= 2.5V, I
C
= 0
25
–
–
V
Emitter–Base Breakdown Voltage
12
–
–
V
Punch–Through Voltage
24
–
–
V
μ
A
μ
A
μ
A
Collector Cutoff Current
–
0.8
5.0
–
20
90
Emitter Cutoff Current
I
EBO
–
0.5
2.5
Note 1. V
PT
is determined by measuring the Emitter–Base floating potential V
EBfl
, using a voltmeter
with 11M
minimum input impedance. The Collector–Base Voltage, V
CB
, is increased until
V
EBfl
= 1V; this value of V
CB
= (V
PT
+ 1).
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