參數(shù)資料
型號(hào): NTD4302T4
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
中文描述: 8.4 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369AA-01 DPAK-3
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 85K
代理商: NTD4302T4
NTD4302
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
μ
A)
Positive Temperature Coefficient
V
(BR)DSS
30
25
Vdc
mV/
°
C
μ
Adc
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 125
°
C)
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
I
DSS
1.0
10
I
GSS
±
100
nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
Negative Temperature Coefficient
V
GS(th)
1.0
1.9
3.8
3.0
Vdc
Static DrainSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc)
DYNAMIC CHARACTERISTICS
R
DS(on)
0.0078
0.0078
0.010
0.010
0.010
0.013
gFS
20
Mhos
Input Capacitance
Output Capacitance
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1 0 MHz)
f = 1.0 MHz)
C
iss
C
oss
C
rss
2050
2400
pF
640
800
Reverse Transfer Capacitance
225
310
SWITCHING CHARACTERISTICS
(Note 6)
TurnOn Delay Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
gs
(Q1)
Q
gd
(Q2)
11
20
ns
Rise Time
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
)
15
25
TurnOff Delay Time
85
130
Fall Time
55
90
TurnOn Delay Time
11
20
ns
Rise Time
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
G
R
= 2.5
)
13
20
TurnOff Delay Time
55
90
Fall Time
40
75
TurnOn Delay Time
15
ns
Rise Time
(V
DD
= 24 Vdc, I
D
= 20 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5
)
25
TurnOff Delay Time
40
Fall Time
Gate Charge
Ga e C a ge
58
(V
DS
= 24 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
2 0 Ad
55
80
nC
5.5
15
BODYDRAIN DIODE RATINGS
(Note 5)
Diode Forward OnVoltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
Reverse Recovery Time
e e se
eco e y
V
SD
0.75
0.90
0.65
1.0
Vdc
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
μ
s)
2 3 Ad
t
rr
t
a
t
b
Q
rr
39
65
ns
20
19
Reverse Recovery Stored Charge
0.043
μ
C
5. Indicates Pulse Test: Pulse Width = 300
μ
sec max, Duty Cycle
2%.
6. Switching characteristics are independent of operating junction temperature.
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