參數(shù)資料
型號(hào)： NTD2955D
廠商： ON SEMICONDUCTOR
英文描述： Power MOSFET
中文描述： 功率MOSFET
文件頁數(shù)： 2/8頁
文件大小： 64K
代理商： NTD2955D
NTD2955
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 0.25 mA)
(Positive Temperature Coefficient)
V
(BR)DSS
60
67
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 60 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 60 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
(Negative Temperature Coefficient)
V
GS(th)
2.0
2.8
4.5
4.0
Vdc
mV/
°
C
Static DrainSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 6.0 Adc)
R
DS(on)
0.155
0.180
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 12 Adc)
(V
GS
= 10 Vdc, I
D
= 6.0 Adc, T
J
= 150
°
C)
V
DS(on)
1.86
2.6
2.0
Vdc
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 6.0 Adc)
gFS
8.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
500
750
pF
Output Capacitance
(V
DS
= 25 Vdc, V
= 0 Vdc,
F = 1.0 MHz)
C
oss
150
250
Reverse Transfer Capacitance
C
rss
50
100
SWITCHING CHARACTERISTICS
(Notes 3 and 4)
TurnOn Delay Time
t
d(on)
10
20
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 12 A,
V
GS
= 10 V, R
G
= 9.1 )
t
r
45
85
TurnOff Delay Time
t
d(off)
26
40
Fall Time
t
f
48
90
Gate Charge
Q
T
15
30
nC
(V
DS
= 48 Vdc, V
= 10 Vdc,
I
D
= 12 A)
Q
GS
4.0
Q
GD
7.0
DRAINSOURCE DIODE CHARACTERISTICS
(Note 3)
Diode Forward OnVoltage
(I
S
= 12 Adc, V
GS
= 0 V)
(I
S
= 12 Adc, V
GS
= 0 V, T
J
= 150
°
C)
V
SD
1.6
1.3
2.5
Vdc
Reverse Recovery Time
(I
S
= 12 A dI /dt
S
/dt = 100 A/ s ,V
GS
= 0 V)
t
rr
50
ns
t
a
40
t
b
10
Reverse Recovery Stored Charge
Q
RR
0.10
C
3. Indicates Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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