參數(shù)資料
型號: NTB5605PT4
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET
中文描述: 18.5 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-04, D2PAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 62K
代理商: NTB5605PT4
NTB5605P
http://onsemi.com
3
40
30
20
10
0
0.25
0.175
0.075
0
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
D
,
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
D
,
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
R
D
,
)
R
D
,
)
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
D
,
1.6
2
1.2
0.8
0
50
100
1
1000
10000
0
6
4
2
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
0
0.5
0.15
0.1
25
20
15
0.05
0
10
30
Figure 3. OnResistance vs. Drain Current and
Temperature
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DraintoSource Leakage Current
vs. Voltage
50
25
0
25
75
125
100
0
8
4
5
30
40
20
10
50
60
40
30
20
10
0
18
12
6
0
24
150
0.4
8
10
6
V
GS
= 8 V
V
GS
= 7 V
T
J
= 25
°
C
V
DS
= 10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
V
GS
= 5.0 V
V
GS
= 5.0 V
V
GS
= 0 V
T
J
= 150
°
C
T
J
= 125
°
C
I
D
= 8.5 A
V
GS
= 5.0 V
V
GS
= 9 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 10 V
V
GS
= 10 V
35
25
15
5
T
J
= 25
°
C
5
0.2
0.35
0.3
0.25
0.4
0.45
0.025
0.05
0.1
0.125
0.15
0.2
0.225
15
9
3
21
1.4
1.8
1
0.6
0.2
10
35
45
25
15
55
1
7
5
3
9
V
GS
= 5.5 V
V
GS
= 6 V
2
1
5
7
9
3
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