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參數(shù)資料
| 型號： | NTB5405N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET(功率MOSFET) |
| 中文描述： | 功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 69K |
| 代理商： | NTB5405N |
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 0
1
Publication Order Number:
NTB5405N/D
NTB5405N
Power MOSFET
40 V, 116 A, Single NChannel, D
2
PAK
Features
Low R
DS(on)
High Current Capability
Low Gate Charge
These are PbFree Devices
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
DraintoSource Voltage
V
DSS
V
GS
I
D
40
±
20
116
V
GatetoSource Voltage
Continuous Drain
Current R
JC
(Note 1)
V
A
Steady
State
T
C
= 25
°
C
T
C
= 100
°
C
82
Power Dissipation
R
JC
(Note 1)
Pulsed Drain Current
Steady
State
T
C
= 25
°
C
P
D
150
W
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
EAS
280
A
°
C
Operating Junction and Storage Temperature
55 to
175
Source Current (Body Diode) Pulsed
75
A
Single Pulse Drainto Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, I
PK
= 40 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
800
mJ
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Units
JunctiontoCase (Drain)
R
θ
JC
1.0
°
C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
MARKING
DIAGRAM
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
40 V
4.9 m
Ω
@ 10 V
116 A
D
2
PAK
CASE 418B
STYLE 2
NChannel
D
S
G
1
2
3
NTB5405NG
AYWW
NTB5405N
G
A
Y
WW
= Specific Device Code
= PbFree Device
= Assembly Location
= Year
= Work Week
1
Device
Package
Shipping
ORDERING INFORMATION
NTB5405NG
D
2
PAK
(PbFree)
D
2
PAK
(PbFree)
50 Units / Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTB5405NT4G
800 / Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB5405NG | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5405NT4G | 功能描述:MOSFET NFET 40V 116A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5411N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220 |
| NTB5411NT4G | 功能描述:MOSFET NFET D2PAK 60V 75A 12.5mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB5412N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220 |
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