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參數(shù)資料
| 型號(hào)： | NT5DS64M4AW-7K |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Double Data Rate SDRAM |
| 中文描述： | 256MB雙數(shù)據(jù)速率SDRAM |
| 文件頁數(shù)： | 19/78頁 |
| 文件大?。?/td> | 1534K |
| 代理商： | NT5DS64M4AW-7K |
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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
19
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Operations
Bank/Row Activation
Before any Read or Write commands can be issued to a bank within the DDR SDRAM, a row in that bank must be “opened”
(activated). This is accomplished via the Active command and addresses A0-A12, BA0 and BA1 (see Activating a Specific Row
in a Specific Bank), which decode and select both the bank and the row to be activated. After opening a row (issuing an Active
command), a Read or Write command may be issued to that row, subject to the t
RCD
specification. A subsequent Active com-
mand to a different row in the same bank can only be issued after the previous active row has been “closed” (precharged). The
minimum time interval between successive Active commands to the same bank is defined by t
RC
. A subsequent Active com-
mand to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access
overhead. The minimum time interval between successive Active commands to different banks is defined by t
RRD
.
Activating a Specific Row in a Specific Bank
RA
BA
HIGH
RA = row address.
BA = bank address.
CK
CK
CKE
CS
RAS
CAS
WE
A0-A12
BA0, BA1
Don’t Care
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NT5DS64M4AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS32M8AW | 256Mb DDR333/300 SDRAM |
| NT5DS32M8AW-6 | 256Mb DDR333/300 SDRAM |
| NT5DS32M8AW-66 | 256Mb DDR333/300 SDRAM |
| NT5DS64M4AT | 256Mb DDR333/300 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NT5DS64M4AW-8B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS64M4CS | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS64M4CS-5T | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS64M4CS-6K | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS64M4CT | 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
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